Nxp Mosfet

Not recommended for new design in. N-channel symmetrical silicon junction Field-Effect Transistor in a SOT23 package. Download 2N7002 Datasheet PDF NXP document. Part Number: 2N7002 Manufacturer: NXP Description: MOSFET, N CH, 60 V, 0.3 A, SOT23 Download Data Sheet Specifications: Continuous Drain Current Id: 300.

Nxp Automotive Mosfet
N Channel Mosfet
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Nxp Mosfet Automotive

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 60 V, 0.3 A, SOT23

Specifications:

Continuous Drain Current Id: 300 mA
Current Id Max: 300 mA
Device Marking: 12%
Drain Source Voltage Vds: 60 V
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -65°C
Junction to Case Thermal Resistance A: 150 °C/W
Mounting Type: SMD
Number of Pins: 3
On Resistance Rds(on): 2.8 Ohm
Package / Case: SOT-23
Power Dissipation: 830 mW
Pulse Current Idm: 1.2 A
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Storage Temperature Max: 150°C
Storage Temperature Min: -65°C
Threshold Voltage Vgs Typ: 2 V
Transistor Case Style: SOT-23
Transistor Polarity: N Channel
Voltage Vds Typ: 60 V
Voltage Vgs Max: 30 V
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2.5 V

RoHS: Yes

BUK7Y13-40B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK7Y13-40B

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 85 W

Предельно допустимое напряжение сток-исток |Uds|: 40 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 58 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 19 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm

Тип корпуса: LFPAK

BUK7Y13-40B Datasheet (PDF)

0.1. buk7y13-40b.pdf Size:190K _philips

BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au

8.1. buk7y153-100e.pdf Size:310K _nxp

BUK7Y153-100EN-channel 100 V, 153 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re

8.2. buk7y14-80e.pdf Size:343K _nxp

BUK7Y14-80EN-channel 80 V, 14 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

8.3. buk7y12-100e.pdf Size:295K _nxp

BUK7Y12-100EN-channel 100 V, 12 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

8.4. buk7y15-100e.pdf Size:316K _nxp

BUK7Y15-100EN-channel 100 V, 15 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe

Nxp Automotive Mosfet

8.5. buk7y19-100e.pdf Size:293K _nxp

BUK7Y19-100EN-channel 100 V, 19 m standard level MOSFET in LFPAK566 November 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant

8.6. buk7y12-40e.pdf Size:312K _nxp

BUK7Y12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

8.7. buk7y113-100e.pdf Size:294K _nxp

BUK7Y113-100EN-channel 100 V, 113 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re

8.8. buk7y15-60e.pdf Size:343K _nxp

BUK7Y15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti

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N Channel Mosfet

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