20V-300V N-Channel Power MOSFET
LEVEL Model type (1, 2, or 3) 1 L Channel length meters DEFL W Channel width meters DEFW LD Lateral diffusion length meters 0 WD Lateral diffusion width meters 0 VTO Zero-bias threshold voltage Volts 0 KP Transconductance Amps/Volts2 2E-5 GAMMA Bulk threshold parameter Volts1/2 0 PHI Surface potential Volts 0.6 LAMBDA Channel-length modulation Volts-1 0 (LEVEL = 1or 2) RD Drain ohmic.
Power MOSFET’s Spice models are behavioral and achieved by fitting simulated data with static and dynamic characterization results. The behavioral model is the best approach because it reproduces the electrical and thermal behavior of the power device through a simplified physical description of the device. PSpice - Analog-MOSFET CHARACTERISTICSWatch more Videos at By: Mr. Arnab Chakraborty, Tutorial.
20V-30V N-Channel Power MOSFET40V-75V N-Channel Power MOSFET80V-100V N-Channel Power MOSFET | 120V-300V N-Channel Power MOSFETOptiMOS™ and StrongIRFET™ Latest Family Selection Guide |
Infineon's OptiMOS™ Power MOSFET portfolio, now complemented by StrongIRFET™, creates a truly powerful combination. The joint portfolio, covering 20V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies.
Product Selection Guide
| Title | Size | Date | Version |
|---|---|---|---|
| Benchmark MOSFETs Product Selection Guide；EN | 3.2 MB | 12 Mar 2008 | |
| NEW! Power Management Selection Guide 2016；EN | 4.7 MB | 22 Feb 2016 | 00_00 |
| Product Selection Guide OptiMOS™ StrongIRFET™ Combined Portfolio - Chinese；CN | 1.1 MB | 15 Sep 2015 | 01_00 |
| Audio Product Selection Guide；EN | 2.8 MB | 12 Mar 2008 | |
| Product Selection Guide Volume 5；EN | 11.1 MB | 01 Aug 2015 | |
| Product Selection Guide OptiMOS™ StrongIRFET™ Combined Portfolio Japanese；JA | 4 MB | 21 Dec 2015 | 01_00 |
| Product Selection Guide OptiMOS™ StrongIRFET™ Combined Portfolio；EN | 1.2 MB | 17 Aug 2015 | 01_00 |
Product Brief
| Title | Size | Date | Version |
|---|---|---|---|
| StrongIRFET™ in Medium Can DirectFET™ Package；EN | 195 KB | 14 Oct 2015 | |
| 4Ps Checklist DirectFET MOSFET；EN | 201 KB | 29 Jan 2008 | |
| Product Brief 40V 60V StrongIRFET™ Logic Level；EN | 115 KB | 24 Aug 2015 | 01_00 |
| 40V and 60V StrongIRFET™；EN | 115 KB | 14 Oct 2015 | |
| DirectFET MOSFETs for Switching Applications；EN | 288 KB | 29 Jan 2008 | |
| DC-DC Buck Converter Applications；EN | 742 KB | 29 Jan 2008 | |
| Industrial Applications；EN | 120 KB | 29 Jan 2008 | |
| Small PowIR MOSFETs；EN | 261 KB | 20 Oct 2011 | |
| Product Brief StrongIRFET™ in Medium Can DirectFET™ package；EN | 219 KB | 12 Apr 2016 | 01_00 |
| Product Brief OptiMOS™ 300V；EN | 277 KB | 19 May 2015 | 01_00 |
| Product Brief OptiMOS™ 200V and 250V | 464 KB | 01 Oct 2013 | |
| Product Brief OptiMOS™ Fast Diode 200V-250V Japanese；JA | 252 KB | 03 Dec 2014 | 01_00 |
| Product Brief OptiMOS™ 5 80V 100V；EN | 381 KB | 04 Feb 2015 | 01_00 |
| Product Brief OptiMOS™ 5 80V 100V Japanese；JA | 419 KB | 04 May 2015 | 01_00 |
| Product Brief OptiMOS™ 5 80V 100V Chinese；CN | 597 KB | 04 May 2015 | 01_00 |
| Product Brief OptiMOS™ 25V/30V | 381 KB | 01 Nov 2012 | |
| Product Brief OptiMOS™ 5 40V 60V | 753 KB | 01 Feb 2014 | |
| Product Brief OptiMOS™ 100V 120V 150V | 784 KB | 11 Oct 2013 | 01_00 |
| Product Brief TO-Leadless Package；EN | 312 KB | 13 Apr 2014 | 01_00 |
| Product Brief OptiMOS™ 75V | 650 KB | 11 Oct 2013 | |
| Product Brief OptiMOS™ D2Pak 7pin | 257 KB | 01 Dec 2011 | |
| Product Brief OptiMOS™ Revolutionizes Oring | 430 KB | 16 Mar 2011 | |
| Product Brief Power stage 5x6 | 738 KB | 01 Nov 2012 | |
| Product Brief OptiMOS™ Power stage 3x3 | 235 KB | 01 Feb 2012 |
Product Information
| Title | Size | Date | Version |
|---|---|---|---|
| Cross Reference List Low Voltage Power MOSFETs OptiMOS™；EN | 89 KB | 08 Jun 2015 | 01_00 |
Application Brochure
| Title | Size | Date | Version |
|---|---|---|---|
| Solutions for Solar Energy Systems；EN | 1.9 MB | 26 Jun 2014 | 01_00 |
| Application Brochure Multicopter Chinese；CN | 1.3 MB | 23 Mar 2016 | 01_00 |
| Application Brochure Automatic Opening System；EN | 409 KB | 28 Jan 2016 | 01_00 |
| Application Brochure Multicopters；EN | 247 KB | 17 Feb 2016 | 01_00 |
| Application Brochure Embedded systems；EN | 879 KB | 04 May 2016 | 01_00 |
| Application Brochure Battery Powered Applications；EN | 2.1 MB | 27 Feb 2014 | 01_00 |
| Application Brochure - Infineon Solutions for Transportation；EN | 6.9 MB | 01 Jun 2013 | 00_00 |
Application Brief
| Title | Size | Date | Version |
|---|---|---|---|
| Application Brief System Solution Battery Powered Motor Drives；EN | 712 KB | 27 Feb 2014 | 01_00 |
| Application Brief System Solution Light Electric Vehicles；EN | 408 KB | 24 Oct 2014 | 01_00 |
Application Notes
| Title | Size | Date | Version |
|---|---|---|---|
| Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs；EN | 251 KB | 27 Oct 2004 | |
| Protecting IGBTs and MOSFETs from ESD；EN | 164 KB | 27 Oct 2004 | |
| DirectFET® Technology: Board Mounting Guidelines.；EN | 3.6 MB | 01 Apr 2016 | 28_00 |
| Discrete Power Quad Flat No-Lead (PQFN) Inspection Application Note；EN | 2.1 MB | 06 Apr 2008 | |
| Class D Audio Amplifier Basics；EN | 305 KB | 19 May 2004 | |
| Heatsink Characteristics；EN | 532 KB | 04 Apr 2003 | |
| Application Note Introduction to Infineons Power MOSFET Simulation Models；EN | 701 KB | 30 Nov 2015 | 01_00 |
| Application Note Recommendations for Board Assembly of PG-T(S)DSON Packages；EN | 1.6 MB | 23 Apr 2008 | 01_00 |
| Measuring HEXFET® Characteristics；EN | 252 KB | 27 Oct 2004 | |
| Power MOSFET Basics；EN | 97 KB | 23 Jan 2007 | |
| DirectFET® Thermal Model and Rating Calculator；EN | 851 KB | 04 Apr 2003 | |
| Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs；EN | 125 KB | 27 Oct 2004 | |
| Audio Power Quad Flat Pack No-Leads (PQFN) Board Mounting Application Note；EN | 881 KB | 01 Jul 2013 | |
| System Simulation Using Power MOSFET Quasi-Dynamic Model；EN | 203 KB | 09 Dec 2003 | |
| Application Note Introduction to Infineon`s Simulation Models for Power MOSFETs | 701 KB | 06 Mar 2014 | |
| Current Ratings of Power Semiconductors；EN | 283 KB | 27 Oct 2004 | |
| Using Trench Technology MOSFETs in Hot Swap Applications；EN | 543 KB | 19 Nov 2014 | |
| Discrete Power Quad Flat Pack No-Leads (PQFN) Board Mounting Application Note；EN | 2.5 MB | 28 Sep 2007 | |
| Class D Amplifier Peformance Relationship to MOSFET Parameters；EN | 236 KB | 19 May 2004 | |
| DirectFET® Technology Materials and Practices；EN | 132 KB | 09 Dec 2003 | |
| Application Note Detailed MOSFET Behavioral Analysis；EN | 7 MB | 25 Jun 2015 | 01_00 |
| Application Note TO-Leadless Package | 899 KB | 13 May 2013 | |
| Application Note 1kW BLDC Power Tool Kit User Manual；EN | 3.2 MB | 08 Jun 2015 | 01_00 |
| Application Note Evaluation Board 5kW TO-Leadless | 654 KB | 17 Sep 2013 | |
| Application Note OptiMOS™ CoolMOS™ Optimal Solutions Suitable for DCDC Converter；EN | 1.1 MB | 30 Jan 2015 | 01_00 |
| Application Note Recommendations for Assembly of Infineon TO Packages | 993 KB | 01 Apr 2008 |
Article
| Title | Size | Date | Version |
|---|---|---|---|
| Article - PSD - From toys to tools；EN | 1.6 MB | 18 May 2016 | 01_00 |
| Effect and Utilization of Common Source Inductance in Synchronous Rectification；EN | 275 KB | 16 Mar 2006 | |
| DirectFET® Power MOSFET Packaging Technology Enables Discrete Multiphase Converter Design Capable of up to 2MHz/phase Operation；EN | 189 KB | 16 Mar 2006 | |
| Choosing the Right Power MOSFET Package；EN | 154 KB | 03 Aug 2006 | |
| New Trench MOSFET Technology for DC-DC Converter Applications；EN | 112 KB | 03 Aug 2006 | |
| How to Choose Control and Sync MOSFETs for Point of Load Converters；EN | 193 KB | 05 Feb 2013 | |
| Advances in Power Devices Driving Class-D Amplifier Progress；EN | 1.1 MB | 01 Mar 2013 | |
| Novel Power MOSFET Packaging Technology Doubles Power Density in Synchronous Buck Converters for Next Generation Microprocessors；EN | 201 KB | 03 Aug 2006 | |
| DirectFET® Technology: A Mechanically Robust Surface Mount Technology；EN | 166 KB | 16 Mar 2006 | |
| Design Considerations for a New Generation Mid-voltage Power MOSFET Technology；EN | 371 KB | 03 Aug 2006 | |
| Using Simulation to Estimate MOSFET Junction Temperature in a Circuit Application；EN | 283 KB | 03 Aug 2006 | |
| How 600 V GaN Transistors Improve Power Supply Efficiency and Density；EN | 596 KB | 18 Jun 2001 | |
| Article - How to Reduce up to 20 Percent of Power Loss in Cordless Power Tools - Bodo`s Power Systems；EN | 722 KB | 20 May 2015 | 01_00 |
| High Current Voltage Regulator Module (VRM) Uses DirectFET® MOSFETs to Achieve Current Densities of 25V/in at 1MHz to Power 32-bit Servers；EN | 127 KB | 16 Mar 2006 | |
| The Mechanical Ruggedness of DirectFET®；EN | 148 KB | 16 Mar 2006 | |
| Analysis of Avalanche Behaviour for Paralleled MOSFETs；EN | 152 KB | 03 Aug 2006 | |
| Paralleling of Power MOSFETs for Higher Power Output；EN | 172 KB | 16 Mar 2006 | |
| Power MOSFET Basics；EN | 83 KB | 03 Aug 2006 | |
| Ensure your System Robustness by choosing hard commutation rugged medium voltage MOSFETs；EN | 11.8 MB | 27 Aug 2014 | |
| Article Electronic Specifier TO-Leadless MOSFET Package；EN | 699 KB | 10 Jun 2015 | 01_00 |
| Article OptiMOS 5 40V and 60V - Power Systems Design Nov 2012 - English；EN | 852 KB | 30 Nov 2012 | |
| Article New OptiMOS™ 40V and 60V Keeping Ahead Through Higher Power Density English；EN | 550 KB | 01 May 2012 | |
| Article PowerMOSFETs OptiMOS™ Markt und Technik May 2012 German；DE | 1.2 MB | 18 Jun 2012 | |
| Article - 出40V和60V的新一代MOSFET；CN | 418 KB | 01 Jun 2012 |
Presentations
| Title | Size | Date | Version |
|---|---|---|---|
| Product Presentation TO-Leadless Package - Optimized for high current applications | 1.6 MB | 08 May 2013 | |
| Presentation - OptiMOS™ the perfect fit for your battery powered application | 2.2 MB | 20 May 2014 | |
| Presentation Power Tools - Japanese；JA | 301 KB | 27 Jun 2014 |
Additional Product Information
| Title | Size | Date | Version |
|---|---|---|---|
| Advertisement SMPS；EN | 229 KB | 20 Aug 2015 | 01_00 |
| Advertisement Automatic Openings System；EN | 134 KB | 28 Jan 2016 | 01_00 |
Pspice Mosfet Switch
Evaluation Boards
| Board | Family | Description | Status |
|---|---|---|---|
| EVAL_IPT007N06N_TOLL | MOSFET | High performance power stage with 60V TO-Leadless, capable of driving 5kW motors.IPT007N06N | active and preferred |
| EVAL_IPT012N08N5_TOLL | MOSFET | High performance power stage with 80V TO-Leadless, capable of driving 5kW motors.IPT012N08N5 | on request |
| EVAL_IPT059N15N3_TOLL | MOSFET | High performance power stage with 150V TO-Leadless, capable of driving 5kW motors.IPT059N15N3 | on request |
| KIT_XMC_DP_EXP_01 | Gate Driver, Microcontroller, MOSFET | The new XMC digital power explorer kit utilizes Infineon’s industry leading XMC range of ARM® Cortex®-M microcontrollers, OptiMOS™ BSC0924NDI MOSFETs and IRS2011S high and low side drivers. The kit’s power board features synchronous buck converter with on-board resistive load banks.BSC0924NDIIRS2011SXMC1302-T038X0200 ABXMC4200-F64K256 AB | active and preferred |
| EVAL-600W-12V-LLC-A | MOSFET, Power Controller (PWM, PFC), Gate Driver | This Evaluation Board shows how to design the Halfbridge LLC stage of a Server SMPS with the goal to meet 80+ Titanium Standard Efficiency requirements. 2EDL05N06PFBSC010N04LSICE2HS01GICE2QR2280ZIPP60R190P6 | active and preferred |
| REF-15W_IR_OPTI3 | Power Controller (PWM, PFC) | PWM-QR ICE2QS03G and µSmartRectifierTM IR1161 for 15W 5V SMPS adapter reference board with 85~265 VAC universal input.• ICE2QS03G | active |
| EVAL_IPT015N10N5_TOLL | High performance power stage with 100V TO-Leadless, capable of driving 5kW motors. | on request | |
| 300W Motor Control SSO8 | Microcontroller, MOSFET | High efficiency inverter application kit featuring Infineon's OptiMOS™ technology6ED003L02BSC016N06NSXC836M2FRI | on request |
| KIT_XMCI45_LARIX_PINU_1 | Quadrocopter demonstrator kit with 9-axis motion tracking, pressure sensor and authentication representation. Control via Bluetooth or radio transmitter. | coming soon |
Simulation Models
| Title | Size | Date | Version |
|---|---|---|---|
| Simulation Model OptiMOS™ Power MOSFET PSpice 20V N-Channel；EN | 65 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 25V N-Channel；EN | 988 KB | 27 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 30V N-Channel；EN | 1.3 MB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 34V N-Channel；EN | 768 KB | 27 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 40V N-Channel；EN | 899 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 60V N-Channel；EN | 1.1 MB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 75V N-Channel；EN | 781 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 80V N-Channel；EN | 795 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 100V N-Channel；EN | 1 MB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 100V P-Channel；EN | 670 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 120V N-Channel；EN | 777 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 250V N-Channel；EN | 780 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 150V N-Channel；EN | 782 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 200V N-Channel；EN | 783 KB | 28 Aug 2015 | 01_00 |
| Simulation Model OptiMOS™ Power MOSFET PSpice 300V N-Channel；EN | 774 KB | 28 Aug 2015 | 01_00 |
Simulation Tool
| Title | Size | Date | Version |
|---|---|---|---|
| Simulate ONLINE - 48V Quasi-Resonant Inverse Buck LED Driver；EN | 801 B | 07 Apr 2016 | 01_00 |
| Simulate ONLINE - 48V OptiMOS™ with clamped inductive load；EN | 793 B | 05 Apr 2016 | 01_00 |
| Simulate ONLINE - 220V CoolMOS™ vs OptiMOS™ with clamped inductive load；EN | 773 B | 05 Apr 2016 | 01_00 |
| Simulate ONLINE - 48V Quasi-Resonant Inverse Buck LED Driver, with valley skipping；EN | 805 B | 07 Apr 2016 | 01_00 |
| Simulate ONLINE - 220V Quasi-Resonant Inverse Buck LED Driver, with valley skipping；EN | 807 B | 07 Apr 2016 | 01_00 |
| Simulate ONLINE - 220V Quasi-Resonant Inverse Buck LED Driver；EN | 803 B | 07 Apr 2016 | 01_00 |
| Simulate ONLINE - 12V Synchronous Buck Converter；EN | 761 B | 05 Apr 2016 | 01_00 |
HUFA76443S3S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HUFA76443S3S
Маркировка: 76443S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 260 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Mosfet Library In Pspice
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 107 nC
Время нарастания (tr): 235 ns
Выходная емкость (Cd): 1185 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: TO-263AB
HUFA76443S3S Datasheet (PDF)
0.1. hufa76443p3 hufa76443s3s.pdf Size:210K _fairchild_semi
HUF76443P3, HUF76443S3SData Sheet December 200175A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.008, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.0095, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEE
6.1. hufa76445p3 hufa76445s3s hufa76445s3st.pdf Size:210K _fairchild_semi
HUFA76445P3, HUFA76445S3SData Sheet January 200275A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.0065, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.0075, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCE
7.1. hufa76429d3s hufa76429d3st.pdf Size:144K _fairchild_semi
HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
7.2. hufa76407dk8t.pdf Size:263K _fairchild_semi
HUFA76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedan
7.3. hufa76407dk8t f085.pdf Size:543K _fairchild_semi
HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance
7.4. hufa76407d3st hufa76407d3 hufa76407d3s.pdf Size:150K _fairchild_semi
Pspice Model Editor
HUFA76407D3, HUFA76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATESOURCE Simulation Models- Temperature Compensated PSPICE a
7.5. hufa76429p3 hufa76429s3s hufa76429s3st.pdf Size:206K _fairchild_semi
HUFA76429P3, HUFA76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEE
7.6. hufa76407p3.pdf Size:208K _fairchild_semi
HUFA76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance M
7.7. hufa76437p3 hufa76437s3s hufa76437s3st.pdf Size:214K _fairchild_semi
HUFA76437P3, HUFA76437S3SData Sheet December 200164A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.017, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCE
7.8. hufa76413p3.pdf Size:206K _fairchild_semi
HUFA76413P3Data Sheet December 200122A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeaturesSOURCE Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.049, VGS = 10VGATE- rDS(ON) = 0.056, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice and SABER Thermal
7.9. hufa76419d3-s hufa76419d f085.pdf Size:197K _fairchild_semi
HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
7.10. hufa76413dk8t f085.pdf Size:617K _fairchild_semi
October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr
7.11. hufa76429d3.pdf Size:229K _fairchild_semi
HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
7.12. hufa76423p3 hufa76423s3s hufa76423s3st.pdf Size:240K _fairchild_semi
HUFA76423P3, HUFA76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE)- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Ele
7.13. hufa76409p3.pdf Size:206K _fairchild_semi
HUFA76409P3Data Sheet December 200117A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.062, VGS = 10VGATE- rDS(ON) = 0.070, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance
7.14. hufa76419d3s.pdf Size:194K _fairchild_semi
HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
7.15. hufa76413d3 hufa76413d3s.pdf Size:204K _fairchild_semi
HUFA76413D3, HUFA76413D3SData Sheet December 200120A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN DRAINSOURCE- rDS(ON) = 0.049, VGS = 10V (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.056, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE a
7.16. hufa76439p3 hufa76439s3s hufa76439s3st.pdf Size:290K _fairchild_semi
HUFA76439P3, HUFA76439S3SData Sheet July 200271A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical Mo
7.17. hufa76409d3st.pdf Size:839K _fairchild_semi
HUFA76409D3, HUFA76409D3STData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
7.18. hufa76432s3s hufa76432s3st.pdf Size:215K _fairchild_semi
HUFA76432P3, HUFA76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEEle
7.19. hufa76432p3.pdf Size:215K _fairchild_semi
HUFA76432P3, HUFA76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEEle
7.20. hufa76409d3.pdf Size:202K _fairchild_semi
HUFA76409D3, HUFA76409D3STData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
7.21. hufa76419p3 hufa76419s3s hufa76419s3st.pdf Size:213K _fairchild_semi
HUFA76419P3, HUFA76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
7.22. hufa76419d3.pdf Size:196K _fairchild_semi
HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
7.23. hufa76423d3s hufa76423d3st.pdf Size:199K _fairchild_semi
HUFA76423D3, HUFA76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
Другие MOSFET... HUFA76432S3ST, HUFA76437P3, HUFA76437S3S, HUFA76437S3ST, HUFA76439P3, HUFA76439S3S, HUFA76439S3ST, HUFA76443P3, 2SK3568, HUFA76445P3, HUFA76445S3S, HUFA76445S3ST, HUFA76609D3, HUFA76609D3S, HUFA76609D3ST, HUFA76619D3, HUFA76619D3S.
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02