Demonstration circuit 2705A showcases the LTC4376 ideal diode controller with integrated MOSFET and reverse input protection up to –40V. The LTC4376 has a current capability of 7A. The board includes two independent LTC4376 ideal diode circuits sharing a common ground and operating over a range of 4V to 40V.
Ideal Diode Controller
The LTC®4376 is a 7A ideal diode that uses an internal 15m? N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4376 reduces power consumption, heat dissipation and PC board area. The LTC4376 controls the forward voltage drop across the internal MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse current transients.
Ideal Diode Mosfet Circuit
Ideal Diode P Mosfet
The LTC4376 also easily ORs power sources to increase total system reliability. With its low operating voltage, small solution size and the ability to withstand reverse input voltage, the LTC4376 excels in portable battery applications. A shutdown mode is available to reduce the quiescent current to 9?A. The SHDN pin can also control the forward current path when an external MOSFET is used in series with the internal MOSFET in a back-to-back configuration.
Operation Of Ideal Diode Model
After applying voltage, the mosfet driver is activated. The driver enables the mosfet and regulates the forward voltage to 30mV (30 times less than a typical normal diode), or to the lowest voltage that can be archieved giving the current draw and the Rds resistance of the mosfet. This resistance causes a forward voltage of about 1mV per Amp. A super low voltage drop diode. A p-channel MOSFET is driven by a tandem of PNP BJTs. This behaves like a slow diode with advantage very low voltage drop. Useful for power supply OR-ing. Create a design and simulate using EE-Sim® tools: The MAX16914/MAX16915 low-quiescent-current overvoltage and (Maxim-Dallas / sample). Basics of Ideal Diodes. An alternate method of reverse battery protection is using an N-Channel MOSFET on the low side, such as the.